Samsung Semiconductor · DRAM
K4A4G085WE-BCRC
DDR4-2400 4GB (512MX8)0.833NS CL
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K4A4G085WE-BCRC specifications
Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.
| Manufacturer | Samsung Semiconductor |
|---|---|
| Ordering code | K4A4G085WE-BCRC |
| Family | DRAM |
| Package | 78-FBGA |
| Product Status | Active |
| DigiKey Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | Not provided in source |
| Memory Size | 4Gbit |
| Memory Organization | 512M x 8 |
| Memory Interface | Parallel |
| Clock Frequency | Not provided in source |
| Write Cycle Time - Word, Page | Not provided in source |
| Access Time | Not provided in source |
| Voltage - Supply | 1.2V |
| Operating Temperature | 0°C ~ 95°C |
| Mounting Type | Surface Mount |
| Package / Case | 78-FBGA |
| Supplier Device Package | Not provided in source |
| Depu · DigiKey Programmable | Not Verified |
| Depu · Memory Format | DRAM |
| Depu · Memory Interface | Parallel |
| Depu · Memory Organization | 512M x 8 |
| Depu · Memory Size | 4Gbit |
| Depu · Memory Type | Volatile |
| Depu · Mounting Type | Surface Mount |
| Depu · Operating Temperature | 0°C ~ 95°C |
| Depu · Package / Case | 78-FBGA |
| Depu · Voltage - Supply | 1.2V |
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