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Samsung Semiconductor · DRAM

K4B1G1646I-BYMA000

DDR3-1866 1GB (64MX16)1.07NS CL1

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K4B1G1646I-BYMA000 component illustration
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K4B1G1646I-BYMA000 specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSamsung Semiconductor
Ordering codeK4B1G1646I-BYMA000
FamilyDRAM
Package96-TFBGA
Product StatusActive
DigiKey ProgrammableNot Verified
Memory TypeVolatile
Memory FormatDRAM
TechnologyNot provided in source
Memory Size1Gbit
Memory Organization64M x 16
Memory InterfaceParallel
Clock Frequency933 MHz
Write Cycle Time - Word, PageNot provided in source
Access TimeNot provided in source
Voltage - Supply1.35V
Operating Temperature0°C ~ 95°C
Mounting TypeSurface Mount
Package / Case96-TFBGA
Supplier Device PackageNot provided in source

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Catalog sources

www.depu.net · K4B1G1646I-BYMA000 ↗

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