Samsung Semiconductor · DRAM
K4F8E304HB-MGCJ
LPDDR4 8Gb x32 3733 Mbps 1.1v 20
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K4F8E304HB-MGCJ specifications
Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.
| Manufacturer | Samsung Semiconductor |
|---|---|
| Ordering code | K4F8E304HB-MGCJ |
| Family | DRAM |
| Package | 200-TFBGA |
| Product Status | Active |
| DigiKey Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | Not provided in source |
| Memory Size | 8Gbit |
| Memory Organization | 256M x 32 |
| Memory Interface | Parallel |
| Clock Frequency | 1866 MHz |
| Write Cycle Time - Word, Page | Not provided in source |
| Access Time | Not provided in source |
| Voltage - Supply | 1.1V |
| Operating Temperature | -25°C ~ 85°C |
| Mounting Type | Surface Mount |
| Package / Case | 200-TFBGA |
| Supplier Device Package | Not provided in source |
Documents and evidence
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Catalog sources
www.ic-components.com · K4F8E304HB-MGCJ ↗Source directory identity match; source detail pending. Specifications remain from existing catalog.
www.depu.net · K4F8E304HB-MGCJ ↗Source directory identity match; source detail pending. Specifications remain from existing catalog.
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